Light-Emitting Diode
Semiconductor diode that emits narrow spectrum light by converting electric energy into electromagnetic radiation.
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Product
Current Pulsers and Laser Diode Drivers (Pulsed Current)
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These instruments generate current pulses whose amplitude is largely independent of the load voltage. This makes them ideal for pulsing device whose voltage may vary with time (for instance, the voltage drop of laser diodes may vary with temperature, or explosive squibs which change impedance during ignition). This voltage independence is a trade-off with speed. If faster rise times are required, consider using pulsed voltage instruments instead.
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Product
High-Speed Switching Diodes 33 To 140 GHz
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Insight Product Company offers high-speed switching diodes with switching time up to 2 nsec and operating frequency range up to 140 GHz. Silicon p+-p-n-n+ high-speed switching diodes are designed to be used in mm-wave switching devices, phase changers, modulators, attenuators for the millimeter wavelength range. They are fabricated in the metal-ruby packages with hard-lead carrier (diameter 3.0 mm, 1.5 mm).
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Product
USHIO Blue Violet Laser Diodes (375nm - 405nm)
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The Optoelectronics Company Ltd
The USHIO HL40071MG is a single transverse mode 405nm laser diode which offers 300mW optical output power in a 5.6mm package with typical optical and electrical characteristics, (Tc=25 degrees C, cw), of 50mA threshold current, operating current of 280mA, operating voltage 6.0V, 6 degrees beam divergence parallel to the junction, 15 degrees beam divergence perpendicular to the junction, laser diode reverse voltage of 2V and operating temperature of 0 to +70 degrees C.
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Product
Modules - Modules, Diode
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Diode modules from Vishay feature a range of technologies including FRED Pt®, HEXFRED®, and high performance Schottky, with reverse voltage ratings up to 2500 V and forward current ratings up to 600 A.
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Product
PRO8 Modular Laser Diode Platform
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Thorlabs offers the PRO8 modular test and measurement platform in 2-slot and 8-slot configurations. These customizable bench top chassis let users build a compact fiber or laser diode testing platforms for their lab or factory floor. Modules include lasers, TEC controllers, optical switches, and current controllers.
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Product
Three-Path Diode
NRPxxS/SN/SN-V
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The R&S®NRPxxS/SN power sensors use three separate diode paths, each operated in the optimum detector range. As a result, the average power can be determined with high accuracy independent of the modulation type. Measurement results are hardly affected by interfering signals or harmonics.
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Product
SiC Schottky Barrier Diode
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We offer high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency.We are also employing a new material (silicon carbide: SiC) for products with even higher efficiency.
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Product
LIV – High-power Laser Diode Testing
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An important aspect of the development and manufacture of laser diodes is the so-called laser diode characterization, or laser IV curve. By applying increasing current to the laser diode so it that emits light, the optical output is measured together with the voltage drop across the diode element. The resulting LIV curve reveals important clues about the quality of manufacture and the performance of the laser diode, enabling a pass/fail decision to be met.
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Product
Gunn Diodes
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The Gunn diode is the best known and most readily available device in the family of transferred electron devices (TED). They are employed as DC to microwave converters using the negative resistance characteristics of bulk Gallium Arsenide (GaAs) and only require a standard, low impedance, constant voltage power supply, thereby eliminating complex circuitry. Teledyne Lincoln Microwave’s DC1200 series of GaAs Gunn diodes is designed for operation at fixed frequency (determined by the oscillator cavity) within a specified band under CW or pulsed conditions.
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Product
Bipolar/FET/Diode Dual Head Production Test System
36XX
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Two test stations on the 3600E and 3601E systems. Performs DC, AC, and pulsed tests. Excels at evaluating difficult to measure parameters on zeners, current limiters, varactor tuning diodes and darlingtons. 24 bin opto-isolated handler/prober interface. Parallel first-in first out computer to tester interface for maximum throughput. Parallel testing with a 3602E or 3603E allows shared test execution for extremely high throughput applications when interfaced to high speed handlers with multiple test sites.
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Product
MICROWAVE SILICON LIMITER PIN DIODES
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Insight Product Company offers Microwave Silicon Limiter PIN Diodes with p+-i-n+ structures are designed to be used in microwave protective  devices included in hybrid integrated circuit (HIC) hermetically sealed, design of which provides protection against  moisture, salt, fog, mycelial fungus, hoarfrost, dew, decreased and increased pressure.
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Product
MICROWAVE SWITCHING DIODES FROM 1 to 40 GHz
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Insight Product Company offers Microwave Switching Diodes with switching time up to 3 nsec and operating in frequency range from 1 to 40 GHz. The p+ -n - n+ silicon spackage-less switching diodes are designed to be used in microwave switching devices, phase changers, modulators, microwave attenuators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.
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Product
Beam Lead PIN Diodes
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The SemiGen SBL 2000 series Beam Lead PIN Diodes feature fast switching speeds at both low capacitance and resistance. Beam Lead PIN Diodes have high levels of mechanical strength and stability during assembly. These diodes are suitable for microstrip or stripline circuits as well as circuits requiring high isolation from a series of mounted diodes such as multi-throw switches, phase shifters, attenuators and modulators.
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Product
Power Diodes
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Renesas power diodes support the high performance and small size and weight of mobile and information devices.
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Product
Broadband Planar Tunnel Diode Detectors
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KRYTAR Broadband Planar Tunnel Diode Detectors are specifically designed for use in today's high-performance microwave instrumentation and systems. KRYTAR detectors are designed for such applications as power measurements, analyzing radar performance, leveling pulsed signal sources, AM noise measurements, system monitoring and pulsed RF measurements in ultra-broadband and mm-Wave applications.
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Product
Tunable Diode Laser Absorption Spectroscopy
5100 TDLAS
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The feature-rich 5100 TDLAS offers high-sensitivity, analyte-specific, fast-response measurements for critical industrial applications. It features a single absorption cell and integrated sample system in a compact, cost-effective package.
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Laser Diode Burn-in Reliability Test System
58604
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The Chroma 58604 is a high density, multi-function, and temperature controlled module for laser diode burn-in and lifetime tests. Each module has up to 256 SMU channels which can source current and measure voltage in various control modes as described below.
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Product
Step Recovery Diodes
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SemiGen’s SSR series of Step Recovery Diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications. Using custom epitaxial wafers, our process ensures high reproducibility. The silicon dioxide passivation process assures greater stability and low leakage currents over temperature. Uniform capacitance ensures repeatability from device to device. These diodes are available in chip or packaged form.
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Product
Silicon Diodes
DT-670 Series
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DT-670 Series silicon diodes offer better accuracy over a wider temperature range than any previously marketed silicon diodes. Conforming to the Curve DT-670 standard voltage versus temperature response curve, sensors within the DT-670 series are interchangeable and, for many applications, do not require individual calibration. DT-670 sensors in the SD package are available in four tolerance bands—three for general cryogenic use across the 1.4 K to 500 K temperature range and one that offers superior accuracy for applications from 30 K to room temperature. DT-670 sensors also come in a seventh tolerance band, B and E, which are available only as bare die. For applications requiring greater accuracy, DT-670-SD diodes are available with calibration across the full 1.4 K to 500 K temperature range.
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Product
Compact Laser Diode Modules: 635nm-639nm Visible Wavelength, 11mm Diameter
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The Optoelectronics Company Ltd
Custom lasing wavelengths, from 405 nm to 852 nm, output power options and laser engraving are available to your specifications. Both standard and custom configurations provide complete cost-effective laser solutions.
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Product
SP6T RF Pin Diode Switches To 12 GHz
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The SP6T series of 6-way absorptive and reflective switches manufactured by Pulsar Microwave cover applications from 300 MHz to 12 GHz. They have an isolation of 60 decibels and most models specify 1.6:1 or better return loss throughout frequency band. These 6-way switches require a +/- 5VDC supply to operate. Switching control uses individual 0-5V TTL control logic. Voltage and logic control interfaces into a system using a 9-pin D-SUB connector installed.
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Product
Tunable Diode Laser Absorption Spectroscopy
5100HD TDLAS
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Using tunable diode laser absorption spectroscopy (TDLAS) technology, the 5100HD can be configured with one or two absorption cells, providing dual stream analysis and/or the measurement of multiple analytes at the same time.
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Product
Millimeter-wave and Microwave GaAs Diodes
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Keysight Technologies provides MMIC diodes ideal for microwave radio, aerospace and defense, and instrumentation applications.
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Atlas ZEN Zener Diode Analyser
ZEN50
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The Atlas ZEN is ideal for testing Zener diodes (including avalanche diodes), transient suppressors, LEDs and LED strings.
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Product
PIN Diode Switches
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After producing quality PIN diode switches in-house for many years, K&L Microwave is pleased to offer packaged options for customer applications. The offerings below are intended to highlight standard products; however, with our extensive in-house capabilities, custom parts are also available.
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SP5T RF Pin Diode Switches To 12 GHz
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Pulsar Microwave's 5-way RF switches cover bands from 300 MHz to 12 GHz in both absorptive and reflective configuration. These SP5T switches have a rating of 200 mW maximum input power and a switching time of 100 ns. They are specified with a minimum isolation of 60 dB and most models maintain a VSWR of 1.6:1 or better on all ports. The SP5T switches are driven by TTL logic control circuitry and require both positive and negative 5-volt supplies for operation. A 9-pin D-SUB connector provides the interface for the power and logic voltages.
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Low-Barrier Schottky Diode Detector, 10 MHz to 18 GHz
8473B
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The Keysight 8473B Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking.
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Diode Power probe
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The COMM-connect 3026 Diode based temperature compensated probe is designed for use with the COMM-connect range of Power Monitors. The probe will handle from 50µW to 100mW . Used with external couplers and the our measurement system application from 1W to 1MW, a high dynamic range can be configured. The 3026 Diode based probe gives excellent stable results along with the COMM-connect Power Monitor variants. This gives our customers a number of applications to monitor and control the last part of your RF network installation from transmitters to the antenna.
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Blue-violet Laser Diode Modules: 450nm, Elliptical Beam
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The Optoelectronics Company Ltd
Custom lasing wavelengths, from 405 nm to 852 nm, output power options and laser engraving are available to your specifications. Both standard and custom configurations provide OEMs, end-users and systems integrators with complete cost-effective laser solutions.
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USHIO Red Laser Diodes (633nm - 690nm)
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The Optoelectronics Company Ltd
Features: 5.6 mm CAN package, Optical output power: 80 mW (CW), 300 mW (pulsed – pulse width: 10 ns, duty: 10%), Lasing wavelength: 658 nm, Wall-plug efficiency*: 33%, Operating temperature: -10° – +60° C (CW); -10° – +75° C (pulsed), Single transverse mode, TE mode oscillation, MTTF >10,000 hours
