GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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GaN Amplifiers
SBP-3233831838-KFKF-E1-HR
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Model SBP-3233831838-KFKF-E1-HR is a power amplifier with a typical small signal gain of 18 dB and a nominal Psat of +38 dBm across the frequency range of 32 to 38 GHz. The DC power requirement for the amplifier is +30 VDC/2 A. The mechanical configuration is an inline structure with K(F) connector as its input port and output port. Other port configurations, such as K connectors and WR-28 waveguides for either the input or output, are also available under different model numbers.
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GaN substrates
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Sumitomo Electric Industries, Ltd.
Gallium Nitride (GaN) substrates are widely used for optical devices in the blue-violate to green ranges due to their excellent material characteristics. In recent years, GaN substrates have been drawing attention for power devices. Many development projects are underway.
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GaN Power Amplifiers > 5W
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Macom Technology Solutions Holdings Inc.
MACOM GaN RF power amplifier solutions are designed with the latest GaN-on-SiC and GaN-on-Si technologies. Our MACOM PURE CARBIDE series of GaN-on-SiC power amplifiers offers high performance and reliability for the most demanding applications. Our expanding GaN portfolio is designed to address the challenging requirements of Aerospace & Defense, Industrial, Scientific and Medical applications and 5G wireless infrastructure. MACOM GaN products deliver output power levels ranging from 2 W to over 7 kW and exhibit best in class RF performance with respect to gain and efficiency. For sensitive Aerospace & Defense applications MACOM can offer a US only supply chain with AS9100D Certification.
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Rad Hard GaN Drivers
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The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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Wideband GaN Amplifiers
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The Teledyne RF & Microwave family of GaN-based amplifiers maximizes power density and efficiency, and establishes a new benchmark for small size in the 0.1 to 6.0 GHz range that operates over multi octave. With dimensions of 2.5"L x 2"W x 0.42"H at only 2.1 cubic inches, these modular, non-ITAR GaN amplifiers maintain the rugged design characteristics needed for harsh airborne and land based requirements.
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Standard GaN Amplifiers
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A GaN (Gallium Nitride) amplifier is a power amplifier that uses GaN, a wide-bandgap semiconductor material, to provide high power density, efficiency, and frequency capabilities.
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RF High Power Amplifier Modules
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Analog Devices MMIC-based GaN and GaAs power amplifiers cover the low hundred MHz frequency range up through and including components in the Ka-band (29 GHz to 31 GHz). Our portfolio also includes GaN-based power amplifier modules with output power exceeding 8 kW. Designed for excellent linearity at high output power, our power amplifiers maintain good heat dissipation and high reliability at elevated temperatures for the wide variety of test, radar, and aerospace and defense applications that they are used in.
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High Voltage Fiber Optic Probe, 150 MHz Bandwidth
HVFO108
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Solid State Power Amplifiers
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Skylink SSPAs incorporate state-of-art DPD and well-done Heat Dissipation technologies with available LDMOS, GaN & GaAs Chips. Solutions of SSPA frequency range from 9kHz to 50GHz and output power up to kilowatts and includes basic PA modules to integrated chassis with embedded software for local and remote control and monitoring.
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Solid State GaN (Gallium Nitride) Amplifiers
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Fairview Microwave’s solid state GaN (Gallium Nitride) power amplifiers (also called SSPAs) feature broad frequency bands ranging from 30 MHz to 7.5 GHz and very high gain levels from 43 to 60 dB. These GaN SSPAs also show impressive harmonic response (-15 to -20 dBc) under worst case conditions. Saturated output power levels range from 10W to 100W with 20% to 35% Power Added Efficiency (PAE). All of our high power solid state GaN amplifiers from Fairview have internally regulated single voltage supplies. Our GaN SSPAs are designed to withstand environmental conditions such as humidity, altitude, shock and vibration with an operating temperature ranges from -40°C to +85°C. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.
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High Voltage Optically Isolated Probe, 350 MHz Bandwidth. Includes soft-carrying case.
DL03-ISO
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The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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MPI Sorter Series
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MPI’s Sorter Series are improving production efficiency and yields for market sectors related to LED chip, package production, discrete device handling, and IC substrate manufacturing. Deploying MPI’s Pick & Place technology, the Sorter Line offers dedicated sorting and defect inspection solutions particularly suited for GaN, GaAs, Vertical LED Chip, Flip Chip, and Laser Diode applications. With a proven heritage of and market-advanced technologies, MPI offers competitive and differentiated solutions that are scalable and cost-effective.
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DL-HCM Series High-Temperature Solder-In Tip
DL-HCM-HiTemp
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60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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Test & Measurement Instrument Amplifiers
MPA-series
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The MPA-series Test & Measurement Instrument Amplifiers are based on state-of-the-art GaN PA modules and operate from 0.7 to 26.5 GHz (multiple frequency options are available). They provide High continuous power across the band, high linearity for wideband communications testing, have variable gain adjustment and a high-resolution display shows amplifier status. Amplifiers offer a wide range of application-specific requirements including simultaneous high-power, wide bandwidth, low harmonic power and high linearity.
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GaN 100W Power Amplifiers
PE15A5033F
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The PE15A5033F is a 100 W high gain Class A/AB Coaxial Linear Power Amplifier operating in the 0.7 to 2.7 GHz frequency range. The amplifier offers 100 Watts typical saturated power and 45 dB minimum small signal gain with 1.5 dB typical gain flatness @ Psat. The amplifier requires typically a +30V DC power supply. The SMA connectorized module is unconditionally stable and operates over the temperature range of 0C and +50C. The unit comes with a Heatsink and Fan.
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DL-ISO 200 Vpp MMCX Tip
DL-ISO-200V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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DL-ISO 40 Vpp MMCX Tip
DL-ISO-40V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Microscope Photoluminescence Spectrometer
Flex One
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Photoluminescence (PL) is the light emission from a material under the excitation by ultraviolet, visible or near infrared radiation. In semiconductor luminescent property measurements, the sample (e.g. GaN, ZnO, GaAs etc.) was usually excited by a laser (with a wavelength of 325 nm, 532 nm, 785 nm etc.), and its PL spectrum is measured to analyze the optical physical properties, such as the band gap width etc.. Photoluminescence is a high sensitivity, non-destructive analysis method, which can provide the information about the structure, composition and surrounding atomic arrangement of materials. Therefore, it is widely used in physics, materials science, chemistry and molecular biology and other related fields.
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Osram High Power Blue Violet Laser Diodes (450-488nm)
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The Optoelectronics Company Ltd
OSRAM Opto Semiconductors is a key player in the field of visible InGaN (Indium Gallium Nitride) lasers. OSRAM Opto Semiconductors offer leading product performance and innovative packaging. Thanks to their excellent beam quality, OSRAM laser diodes are ideally suited for the optical imaging of light. Not only that, but their small package size is particularly beneficial to highly compact systems, such as pico projectors. OSRAM laser diodes offer high efficiency and long lifetime: due to their excellent efficiency (ratio of light produced compared to electric power consumed), the temperature increase experienced by blue InGaN lasers during operation is kept to an absolute minimum, allowing them to deliver a long life – up to 10,000 hours at 40 °C.
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Broadband High Power Amplifiers
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Chengdu KeyLink Microwave Technology Co., Ltd.
KeyLink's broadband high power amplifiers are available for operating frequencies from 1 MHz to 18 GHz. Power levels for octave and multi-octave designs range from 2 watts to over 500 watts. Based on state-of-the-art GaN, GaAs, LDMOS power devices and MMICs, KeyLink designs and manufactures SSPA(solid state power amplifiers ) with excellent performance in terms of high efficiency over ultra-wide working band, high reliability and ruggedness.
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Solid State Broadband High Power Amplifier
Model 2215
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The 2215 is suitable for octave bandwidth high power CW, modulated, and pulse applications. This amplifier utilizes high power GaN devices that provide wide frequency response, high gain, high peak power capability, and low distortions. Exceptional performance, long-term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and all qualified components. The amplifier is constructed within a single 5RU drawerincluding the forced air-cooling. Available operating voltage configurations are single-phase 220 VAC up to 400 Hz and 28 VDC.
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Communications/Data Link Amplifiers
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Amplifiers specific to the Communications systems include a wide range of Solid State Power Amplifiers (SSPAs) and Low Noise Amplifiers (LNAs) originally from Paradise Datacom and a range of organically developed products within TMS. Satcom SSPAs are considered a core competence of Paradise Datacom's product line who have invested heavily in converting it's complete amplifier offering from GaAs to GaN from C-Band all the way to Ka-Band.
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RF Amplifiers up to 2500 MHz
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L and S Band 1,2,4, and 8 Kilowatt rack mount solid state microwave amplifiers ideal for CW and pulse TWT amplifier replacement utilizing GaN technology and rivals the TWT amplifier in size and weight. Also available is our broad line of high power modules including 25, 50, and 100 watt pallets for integrating into your own power amplifier design.
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Saluki SPA Series Solid State Power Amplifier (max. 23KW output power)
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Saluki SPA series is a solid-state RF power amplifier with an output frequency of maximum 110GHz and an output power of a maximum of 23000W. Its design is based on the most advanced GaN technology in the industry, and its power output is efficient and reliable. The product has functions such as temperature and current detection, alarm protection and so on.The broadband solid state power amplifier is mainly used for testing and measuring instruments, Communication or interference, aviation control and other fields.*Customization Available*
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High Voltage Optically Isolated Probe, 1 GHz Bandwidth. Includes soft-carrying case.
DL10-ISO
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The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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Silicon & Compound Wafers
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Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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DL-ISO 1000 Vpp Square Pin Tip
DL-ISO-1000V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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250 MHz 60 V Common Mode Differential Probe
DL02-HCM
Differential Probe
60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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High-Power CW Amplifiers
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Our family of solid-state power amplifiers (SSPAs) utilizes proprietary technology and a proven building block approach that enables rapid customization to specific requirements. The world-class design team understands the tradeoffs between GaAs versus GaN and FET versus MMIC to quickly achieve the right design for the right problem. Whether you need a connectorized compact GaN SSPA or an integrated SSPA assembly, we have the technical know-how to deliver on-time and on-budget.
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60 V Common Mode Differential Probes
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The 60 V Common Mode Differential Probes are the ideal probes for lower voltage GaN power conversion measurement with the highest accuracy, best CMRR, and lowest noise.
