Memory Device
directly accessible computer's internal or main memory.
See Also: Memory, Memory Test, DDR, NAND, DRAM, RAM, ROM, Memory Testers, DUT
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Product
Battery Testers
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Memory & Read FunctionRight Device to know the TRUE -LIFE of Battery Capacity (Resistive / Voltage) Simultaneously MeasureOn - Line Testing without shutting down batteryBuilt - in Comparator FunctionRates Conditions as PASS, WARNING or FAILDatalogging Memory FunctionCompact and lightweightRS-232 Interface & SoftwareAuto Power Off
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Product
High Speed & Precision Pressure Insensitive Mass Flow Module
D700MG
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Critical semiconductor manufacturing processes continuously desire precision gas flow control devices that enable both future innovation, and lab to fab transition of leading edge memory and logic device. HORIBA's propose the new pressure based MFC D700MG, the upper compatible model of the D500MG to support customer’s challenges.
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Product
Memory Test System
T5221
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The T5521 is a memory test system that supports wafer test and wafer burn-in test of non-volatile memory devices such as NAND flash, housed within a multi-wafer prober to reduce test floor footprint.
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Product
High Speed Pick and Place Handler
Commander 2000
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At throughput rates in excess of 2000 Units per Hour the HT Commander 2000 system provides unparalleled performance for the production handling and programming of flash memory devices or modules.
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Product
16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-D4U16GE32-SE
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16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
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8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
32GB DDR4-3200 2GbX8 1.2V Samsung Chip
AQD-D4U32GN32-SB
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32GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
16G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V16GN56-SBH
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
USRP‑2930, 20 MHz Bandwidth, 50 MHz to 2.2 GHz, Included GPS-Disciplined OCXO, USRP Software Defined Radio Device
781910-01
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20 MHz Bandwidth, 50 MHz to 2.2 GHz, Included GPS-Disciplined OCXO, USRP Software Defined Radio Device - The USRP‑2930 is a tunable RF transceiver with a high-speed analog‑to‑digital converter and digital‑to‑analog converter for streaming baseband I and Q signals to a host PC over 1 Gigabit Ethernet. It also features a GPS-disciplined oscillator (GPSDO) with PPS accuracy of ±50 ns. You also can use the NI USRP‑2930 for the following communications applications: white space; broadcast FM; public safety; land-mobile, low-power unlicensed devices on industrial, scientific, and medical (ISM) bands; sensor networks; cell phone; amateur radio; or GPS.
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Product
16GB ECC DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GE56-SB
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SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
8GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U8GN32-SE
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8GB, DDR 4 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
16GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U16GN32-SE
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16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
USRP-2955, 10 MHz to 6 GHz, 80 MHz Bandwidth, GPS-Disciplined OCXO, Reconfigurable USRP Software Defined Radio Device
785264-01
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The USRP-2955 provides an integrated hardware and software solution for rapidly prototyping high-performance wireless receiver systems. It is designed for over-the-air signal acquisition and analysis. It features a two-stage superheterodyne architecture with four independent receiver channels and shares local oscillators for phase-coherent operation. It also offers a Kintex-7 FPGA programmable with the LabVIEW FPGA Module. With these features, the USRP-2955 has the RF and processing performance for applications such as spectrum monitoring, direction finding, signals intelligence, wideband recording, and radar prototyping. The USRP-2955 is equipped with a GPS-disciplined 10 MHz oven-controlled crystal oscillator (OCXO) Reference Clock, which improves frequency accuracy and synchronization.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-SD4U16GN32-SE
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16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
32GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V32GN56-SB
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SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
Micron 8G DDR4 3200 288PIN 1GbX8 REG 1.2V
96D4-8G3200ER-MI
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DDR4-3200 Registered ECC DIMM, 1.2V power consumption, Supports ECC error detection and correction. Data bus inversion (DBI) for data bus, Low-power auto self refresh (LPASR).
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Product
16GB ECC SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GE56-SB
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SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip
AQD-D4U4GR24-SG
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DDR4-2400 Registered DIMM. – standard height, 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption. Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data integrity.
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Product
8GB SO-DDR5-5600 1GX16 1.1V SAM
AQD-SD5V8GN56-SC
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SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
USRP Software Defined Radio Device
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The USRP Software Defined Radio Device is a reconfigurable RF device that includes a combination of host-based processors, FPGAs, and RF front ends. The USRP Software Defined Radio Device include options that range from lower cost options with fixed FPGA personalities to high-end radios with a large, open FPGAs and wide instantaneous bandwidth. These devices can be used for applications such as multiple input, multiple output (MIMO) and LTE/WiFi testbeds, SIGINT, and radar systems.
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Product
Dynamic Power Device Analyzer/Double Pulse Tester
PD1500A
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As an off-the-shelf measurement solution, the PD1500A delivers reliable, repeatable measurements of wide-bandgap semiconductors. The platform ensures user safety and protection of the system’s measurement hardware.
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Product
8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip
AQD-SD5V8GN56-HC
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Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
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Product
16GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GN56-SB
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SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
Memory Test System
T5230
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T5230 memory test system for NAND/NVM devices adopts a combined array architecture to achieve best-in-class cost-of-test performance for wafer test, including wafer-level burn-in (WLBI) and built-in self-test (BIST). The system can perform on-wafer test of 1,024 memory devices per test head in parallel, delivering high productivity and enabling floor space savings of up to 86%. Multiple test cells are connected per system controller in the T5230, allowing independent wafer test of each test cell. The test cells can be stored in a general multi-wafer prober while minimizing the test cell floor space, and the tester can be docked with probers in both linear and multi-stack configurations. For functional tests at a maximum test rate of 125MHz/250Mbps, the T5230 assures high timing accuracy, repeatability, and failure detection capability.
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Product
SODIMM DDR4 3200MT/s
SQR-SD4S
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Original Hynix IC chips adopted, Data transfer rate: 3200MT/s. Capacity: 4/8/16/32GB, Operating temperature: 0 °C ~ 85 °C Lifetime warranty.
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Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
Rugged SODIMM DDR4 2666/3200 Wide Temperature
SQR-YD4I
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Robust PCB designed with Mounting Hole with Military MIL-810G verified. Extreme Data Transfer rate up to 3200 MT/s, Capacity: up to 32GB. Wide Temperature supported: -40°C ~ 85 °C, Original IC chip (Samsung/Hynix).
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Product
Reflective Memory
VME-5565
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The VME-5565 Reflective Memory node card provides a high-speed, low latency, deterministic interface that allows data to be shared between up to 256 independent systems (nodes) at rates up to 170 Mbyte/s. Each Reflective Memory board can be configured with either 64 Mbyte or 128 Mbyte of onboard SDRAM. The local SDRAM provides fast Read access times to stored data.
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Product
Memory And Storage
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Intel provides technically advanced products that support every level of computing—from data center workloads to enthusiast usage. Intel® Optane™ memory creates an accelerated bridge between memory and storage. Intel® Solid State Drives (Intel® SSDs) provide storage flexibility, stability, and efficiency.
